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在ｐ型单晶硅衬底上沉积一层掺磷Ｎ＾＋型纳米硅薄膜，形成ｎｃ－Ｓｉ：Ｈ／ｃ－Ｓｉ构成的Ｎ＾＋／ｐ异质结构。文中报道了它的独特性能；其反向击穿电压可达７５Ｖ，反向漏电流仅ｎＡ量级，同开......
